In this paper, we theoretically investigate the total optical coefficient (TOAC) considering 1S-2P and 2S-2P conduction subband transitions in a single parabolic quantum well (SPQW) with an on-center hydrogen-like impurity. Within the framework of the effective-mass approximation, the Schrödinger equation is solved numerically to obtain the eigenvalues and their corresponding eigenvectors using the finite difference method. The calculations are performed for finite confinement potential height, taking into account the dielectric and effective mass mismatches between GaN and InGaN materials under the considered electric field and temperature effects. The temperature dependence of the effective mass, dielectric constant and band gap energy are obtained accordingly. On the one hand, the results show that a significant shift is produced with the variation of both the temperature and the intensity of the electric field. On the other hand, the absorption spectrum is shifted to lower energies with increasing both electric field strength and temperature. Moreover, its amplitude is enhanced with an increase in the intensity of the electric field, and show a slight drop with increasing temperature for the two optical transitions considered. The results show that such parameters can be used to adjust the optical properties of single parabolic Quantum Well for solar cell applications.

Due to their particular thermodynamic and chemical proprieties, III-nitride semiconductor materials alloys such as InN, GaN, AlN, InGaN have gained much interest and have emerged as a very attracted and promising materials for optoelectronic applications. Their direct band gap make them a great candidate for solar cells, Laser, Photo-detectors and so on [

The linear and third order nonlinear optical absorptions in different shapes and different confinement potential profiles (infinite and/or finite) are one of the most important proprieties of nano-structured semiconductor materials. For instance, Ungan et al. [_{x}Ga_{1−x}As single quantum well system. They have studied the linear and nonlinear optical properties in GaAs/Al_{x}Ga_{1−x}As double inverse parabolic quantum wells under applied electric and magnetic fields. Moreover, the linear and third order nonlinear optical absorptions in typical asymmetric double triangular QWs are investigated theoretically under the applied electric field influences [

Recently, Aydinoglu et al. have studied the nonlinear optical properties of asymmetric double-graded quantum wells under the effects of the structure parameters such as the central barrier’s thickness and the aluminum concentrations [

However, all authors cited above have reported their works without considering the presence of the impurity, which generally alters the electronic and optical properties leading to the degradation of the performance of devices based-on. In the present paper, on the one hand, our aim is to investigate the combined effects of temperature and electrical field on the total optical absorption related to 1S-2P and 2S-2P transitions in

Within the framework of the effective-mass approximation, the time-independent Schrödinger equation in the effective units describing an electron in the presence of the impurity and electric field is given by the following expression:

where, ℏ is the Planck’s constant, e is the electron charge,

where,

To obtain the ground (1S-state), second-excited state (2P-state) and their associated energy levels of the Hamiltonian

The mesh-grid of 3N + 1 point is considered for both layers (Barriers/wells). We provided A specific discretization step for each layer was provided. For the well, the step is hw (=

The derivatives electron wave functions are given by the following expressions:

Based on the compact density matrix approach and the iterative procedure, the linear, third-order nonlinear and total optical absorption coefficients are given as the same that was described in our previous works [

where, the total optical absorption coefficient is defined as the sum of both linear and third order nonlinear contributions. It is given as following:

where,

To ensure the validity of this approach, we have discussed along this paper the electric field and temperature effects on the implied subband transitions for finite parabolic confinement profile.

All parameters related to the ternary

From

It is interesting to notice that the amplitudes of both transitions induced spectra appear to be enhanced as

Finally, TOAC related to 1S-2P and 2S-2P subband transitions in symmetric

Generally, our obtained results related to 1S-2P and 2S-2P transitions induced TOAC in SPQW based on

To sum up, this work is devoted to the theoretical study of the effects of external applied electric field and temperature on total optical absorption coefficients (OACs) of a single parabolic quantum well (QW). The results show that the applied electric field and temperature have significant influences on the optical properties of single parabolic QW. It is obtained that the wave functions, the energy levels and magnitudes of the resonant spectra of the total OACs vary according to the electric field and the temperature. A significant red-shift of the optical spectra is obtained with increasing both the electric field and the temperature. Therefore, it is revealed that the optical characteristics can be adjusted by changing the intensity of electric field and temperature which promise a new degree of freedom in the next generation of eventual GaN/(In,Ga)N based solar cells.

Owing to the importance of the III-nitrides semiconductors, particularly in optoelectronics, we assume that the present work provides a modest contribution to optimizing optical absorption for solar cell applications. In addition, it would induce further theoretical and experimental research works on Gan/InGaN based Multi-QWs for LEDs, lasers, and photo-detector applications.

Total optical absorption coefficient

Single parabolic quantum well

Gallium-nitride

Indium-gallium-nitride

Quantum state

Effective electric field strength

I thank all authors with whom I have had the pleasure to work during this paper and other related project.